Exploring materials for future spintronics

Magnetoelectronic transport properties of noncollinear antiferromagnets

Antiferromagnetic materials with a noncollinear magnetic structure play a vital role in the emerging field of antiferromagnetic spintronics. For instance, in contrast to what one might expect, these materials can exhibit a large anomalous Hall effect despite a tiny magnetization arising from an intrinsic property of the electronic band structure and from breaking certain symmetry relations. Currently, we are investigating the electronic transport properties and microwave absorption of various Mn-based compounds to unravel the coupling between the magnetic and crystalline structure under mechanical strain. 

Phase transitions associated with magnetic-field induced topological orbital momenta in a non-collinear antiferromagnet. Deng, S.; Gomonay, O.; ChenJ.; Fischer G.; He L.; Wang, C.; Huang, Q.; Shen F.; Tan Z.; Zhou R.; Hu Z.; Šmejkal L.; Sinova J.; Wernsdorfer W.; Sürgers C. Nature Communications 15:822 (2024) https://doi.org/10.1038/s41467-024-45129-x

Anomalous Nernst effect in the noncollinear antiferromagnet Mn₅Si₃. Sürgers, C.; Fischer, G.; Campos, W. H.; Hellenes, A. B.; Šmejkal, L.; Sinova, J.; Merz, M.; Wolf, T.; Wernsdorfer, W. Communications Materials, 5:176 (2024). https://doi.org/10.1038/s43246-024-00617-x

Spininjection and spinmanipulation in CMOS-compatible heterostructures

In this cooperative project between the Physikalische Institut (PHI) at KIT and the Institute of Semiconductortechnology (IHT) at the University of Stuttgart we aim to demonstrate spininjection, -detection and –manipulation in CMOS-compatible devices. The project was supported by the Deutsche Forschungsgemeinschaft (DFG) until 2020.

Lateral MnGe spin-valve in contact with a high-mobility Ge two-dimensional hole gas. Weißhaupt, D.; Sürgers, C.; Bloos, D.; Funk, H. S.; Oehme, M.; Fischer, G.; Schubert, M. A.; Wenger, C.; van Slageren, J.; Fischer, I. A.; Schulze, J. 2024. Semiconductor Science and Technology, 39, Art.-Nr.: 125004. doi:10.1088/1361-6641/ad8d06

Detecting mechanical strain by NV-center spectroscopy

LogoWe propose to implement a new experimental technique based on optically detected nitrogen-vacancy (NV) color centers in diamond. We will extend this method by application to two-phase heterostructures comprising a metallic thin film deposited on a diamond membrane containing NV centers located close to the film/membrane interface. By this approach we will be able to sense the local intrinsic strain of the film by optical read-out of the NV-center energy states. The power of this method will be demonstrated by investigating metallic antiferromagnets with non-collinear spin arrangements currently investigated in our group. The project was part of the collaborative research center TRR288 "Elastic Tuning and Response of Quantum Phases of Matter" (Frankfurt - Karlsruhe - Mainz) supported by the DFG since 2020.

Microwave Control of the Tin-Vacancy Spin Qubit in Diamond with a Superconducting Waveguide. Karapatzakis, I.; Resch, J.; Schrodin, M.; Fuchs, P.; Kieschnick, M.; Heupel, J.; Kussi, L.; Sürgers, C.; Popov, C.; Meijer, J.; Becher, C.; Wernsdorfer, W.; Hunger, D. Physical Review X 14, 031036 (2024). https://doi.org/10.1103/PhysRevX.14.031036

 

Experimental methods

  • Thin film and multilayer deposition (various methods)
  • Electron diffraction, x-ray diffraction, magneto-optical spectroscopy
  • Electronic transport measurements (resistivity, Hall effect, Nernst effect, electric-field effect) at low temperatures and in magnetic fields

Current collaborations

Christoph Sürgers

Researcher ID-2873-2013

Recent Publications


2024
Lateral MnGe spin-valve in contact with a high-mobility Ge two-dimensional hole gas
Weißhaupt, D.; Sürgers, C.; Bloos, D.; Funk, H. S.; Oehme, M.; Fischer, G.; Schubert, M. A.; Wenger, C.; van Slageren, J.; Fischer, I. A.; Schulze, J.
2024. Semiconductor Science and Technology, 39 (12), 125004. doi:10.1088/1361-6641/ad8d06
Electronic transport in reactively sputtered Mn3GaN films prepared under optimised nitrogen flow
Suergers, C.; Fischer, G.; Deng, S.; Hu, D.; Wang, C.
2024. Journal of Physics: Materials, 7, Article no: 045004. doi:10.1088/2515-7639/ad71f5
Microwave Control of the Tin-Vacancy Spin Qubit in Diamond with a Superconducting Waveguide
Karapatzakis, I.; Resch, J.; Schrodin, M.; Fuchs, P.; Kieschnick, M.; Heupel, J.; Kussi, L.; Sürgers, C.; Popov, C.; Meijer, J.; Becher, C.; Wernsdorfer, W.; Hunger, D.
2024. Physical Review X, 14 (3), Art.-Nr.: 031036. doi:10.1103/PhysRevX.14.031036
Nano-assembled open quantum dot nanotube devices
Althuon, T.; Cubaynes, T.; Auer, A.; Sürgers, C.; Wernsdorfer, W.
2024. Communications Materials, 5, Article no: 5. doi:10.1038/s43246-023-00439-3
Phase transitions associated with magnetic-field induced topological orbital momenta in a non-collinear antiferromagnet
Deng, S.; Gomonay, O.; Chen, J.; Fischer, G.; He, L.; Wang, C.; Huang, Q.; Shen, F.; Tan, Z.; Zhou, R.; Hu, Z.; Šmejkal, L.; Sinova, J.; Wernsdorfer, W.; Sürgers, C.
2024. Nature Communications, 15 (1), Article no: 822. doi:10.1038/s41467-024-45129-x
Anomalous Nernst effect in the noncollinear antiferromagnet Mn₅Si₃
Sürgers, C.; Fischer, G.; Campos, W. H.; Hellenes, A. B.; Šmejkal, L.; Sinova, J.; Merz, M.; Wolf, T.; Wernsdorfer, W.
2024. Communications Materials, 5, Article no: 176. doi:10.1038/s43246-024-00617-x
2022
Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layers
Funk, H. S.; Kern, M.; Weißhaupt, D.; Sürgers, C.; Fischer, I. A.; Oehme, M.; Slageren, J. van; Schulze, J.
2022. Journal of magnetism and magnetic materials, 546, Art.-Nr.: 168731. doi:10.1016/j.jmmm.2021.168731
2021
Formation of MnGe on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics
Weisshaupt, D.; Funk, H. S.; Surgers, C.; Fischer, G.; Oehme, M.; Schwarz, D.; Fischer, I. A.; Slageren, J. van; Schulze, J.
2021. 44th International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia, 27 Sept.-1 Oct. 2021, 45–49, Institute of Electrical and Electronics Engineers (IEEE). doi:10.23919/MIPRO52101.2021.9596924
Weak localization and weak antilocalization in doped Ge1-ySny layers with up to 8% Sn
Weißhaupt, D.; Funk, H. S.; Kern, M.; Dettling, M. M.; Schwarz, D.; Oehme, M.; Sürgers, C.; Slageren, J. van; Fischer, I. A.; Schulze, J.
2021. Journal of physics / Condensed matter, 33 (8), 085703. doi:10.1088/1361-648X/abcb68
Resolving the spin polarization and magnetic domain wall width of (Nd,Dy)FeB with spin-polarized scanning tunneling microscopy
Miyamachi, T.; Sürgers, C.; Wulfhekel, W.
2021. Applied physics express. Letter, 14 (11), Art.Nr. 115504. doi:10.35848/1882-0786/ac2a56
2020
Anomalous Nernst effect of a ferromagnetic film on a semiconductor
Deng, S.; Kraft, R.; Fischer, G.; Sürgers, C.
2020. Applied physics letters, 117 (26), 262402. doi:10.1063/5.0033683
Anomalous Nernst effect in ferromagnetic MnGeC thin films on insulating sapphire
Kraft, R.; Srichandan, S.; Fischer, G.; Sürgers, C.
2020. Journal of applied physics, 128 (3), 033905. doi:10.1063/5.0014815
2019
Onset of phase diffusion in high kinetic inductance granular aluminum micro-SQUIDs
Friedrich, F.; Winkel, P.; Borisov, K.; Seeger, H.; Sürgers, C.; Pop, I. M.; Wernsdorfer, W.
2019. Superconductor science and technology, 32 (12), 125008. doi:10.1088/1361-6668/ab4918
Magnetic characterization of a Mn based ferromagnet on SixGe(1-x-y)Sny with high Sn content
Funk, H. S.; Kern, M.; Weisshaupt, D.; Sürgers, C.; Fischer, I.; Oehme, M.; Slageren, J. van; Schulze, J.
2019. ECS transactions, 93 (1), 101–104. doi:10.1149/09301.0101ecst
Controlling Chiral Spin States of a Triangular‐Lattice Magnet by Cooling in a Magnetic Field
Deng, S.; Fischer, G.; Uhlarz, M.; Wosnitza, J.; Bohnen, K.-P.; Heid, R.; Wang, C.; Sürgers, C.
2019. Advanced functional materials, 29 (37), Article No.1900947. doi:10.1002/adfm.201900947
2018
Creation of equal-spin triplet superconductivity at the Al/EuS interface
Diesch, S.; Machon, P.; Wolz, M.; Sürgers, C.; Beckmann, D.; Belzig, W.; Scheer, E.
2018. Nature Communications, 9 (1), Article no 5248. doi:10.1038/s41467-018-07597-w
Electrical switching of the anomalous Hall effect
Sürgers, C.
2018. Nature Electronics, 1, 154–155, Nature Research. doi:10.1038/s41928-018-0047-7
Local Joule Heating Mimicking Electroresistance-Like Behavior in Antiperovskite Mn3GaC
Deng, S.; Fischer, G.; Srichandan, S.; Wang, L.; Wang, C.; Sürgers, C.
2018. Advanced electronic materials, 4 (9), Art.-Nr.:1800028/1–6. doi:10.1002/aelm.201800028